The technology of circuit elements

To create a semiconductor devices and integrated microcircuits (IMC) is quiet complicated process. First of all it should be calculated all parameters of the elements, also creation and modeling of topology. After Schema - Technical calculations is needed to work on Photo-Pattern as the main tool for the design of all components. This includes an accuracy combination of lines and dots. Next process is selection of photo-resist kind, covering, formation, and local poisoning methods. The window size control and the process of diffusion follow this. All of the above processes are beyond the scope of a diploma thesis, therefore, the present paper aims are to be carried out and studied the processes of silicium coverings and the thermal SiO2 covering, photolithography local diffuses and metallization. After carried out experimental processes was measured Dielectric thickness and critical dimensions by microscope МИИ-4 and "LEITZ", Four - probes surface device, the next type and thickness of the diffusion, before and after metal casting the magnitude of Ohmic contact. The measurements showed that the obtained results fully comply with the field of tranzisor formation technology, silicium resistors, and condenser.