Dispersion, High-Frequency and Power Characteristics AlN/GaN MISFETs with in-situ Si3N4

Author: GIORGI AROSHVILI
Co-authors: Dimitris Pavlidis
Keywords: AlN, AlN/GaN MISFET, AlN/GaN HFET, Wide-bandgap, frequency-dispersion
Annotation:

The paper presents a systematic study of in-situ passivated AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) with submicron gates. DC, high frequency small signal, large signal and low frequency dispersion effects are reported. The DC characteristics are analysed in conjunction with the power performance of the device at high frequencies. Studies of the low frequency characteristics are presented and the results are compared with those of AlGaN/GaN High Electron Mobility Transistors (HEMTs). Small signal measurements showed a current gain cut-off frequency and maximum oscillation frequency of 49.9 GHz and 102.3 GHz respectively. The overall characteristics of the device include a peak current density of 335 mA/mm, peak extrinsic transconductance of 130 mS/mm, and a maximum output power density of 533 mW/mm with peak power added efficiency (P.A.E.) of 41.3% and linear gain of 17 dB. The maximum frequency dispersion of transconductance and output resistance of the fabricated MISFETs is 20% and 21% respectively