Nanosize Dielectric Films

Author: Zurab Kushitashvili
Keywords: Plasma, Anodizing
Annotation:

The basic element of micro and nanoelectronic devices is a dielectric, which opto-electronic properties determines their wide use in the integrated circuits industry. Formation dielectric films is the standard high-temperature (11000C) technology and high temperature negatively affects on the properties of the devices. Therefore decreasing temperature of creation dielectric layers is a critical factor in nanodevice production. To solve this problem there have been introduced the catalytic plasma anodization process. This process is carried out at low temperature (300-400C), it is a dry process and has good compliance with technology of semiconductor devices. Dielectric films received by anodization don’t contain impurities, are characterized with good adhesion to substrate, have high breakdown voltage and good surface without ions intact from plasma. These parameters determine optical and electrical properties of dielectric.

Lecture files:

ნანოსისქის დიელექტრიკული ფირები [ka]
ფოტოლიტოგრაფია [ka]